JPH0441174Y2 - - Google Patents
Info
- Publication number
- JPH0441174Y2 JPH0441174Y2 JP6168987U JP6168987U JPH0441174Y2 JP H0441174 Y2 JPH0441174 Y2 JP H0441174Y2 JP 6168987 U JP6168987 U JP 6168987U JP 6168987 U JP6168987 U JP 6168987U JP H0441174 Y2 JPH0441174 Y2 JP H0441174Y2
- Authority
- JP
- Japan
- Prior art keywords
- reaction tube
- exhaust pipe
- internal reaction
- raw material
- wafers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000006243 chemical reaction Methods 0.000 claims description 57
- 235000012431 wafers Nutrition 0.000 claims description 20
- 239000002994 raw material Substances 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000376 reactant Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000011109 contamination Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6168987U JPH0441174Y2 (en]) | 1987-04-22 | 1987-04-22 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6168987U JPH0441174Y2 (en]) | 1987-04-22 | 1987-04-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63170465U JPS63170465U (en]) | 1988-11-07 |
JPH0441174Y2 true JPH0441174Y2 (en]) | 1992-09-28 |
Family
ID=30895263
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6168987U Expired JPH0441174Y2 (en]) | 1987-04-22 | 1987-04-22 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0441174Y2 (en]) |
-
1987
- 1987-04-22 JP JP6168987U patent/JPH0441174Y2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS63170465U (en]) | 1988-11-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6045862A (en) | CVD film forming method in which a film formation preventing gas is supplied in a direction from a rear surface of an object to be processed | |
US4989540A (en) | Apparatus for reaction treatment | |
JP2969596B2 (ja) | Cvd装置 | |
JPH0441174Y2 (en]) | ||
JP3056241B2 (ja) | 熱処理装置 | |
JP2758872B2 (ja) | 縦型cvd装置 | |
JPH06349738A (ja) | 縦型減圧cvd装置 | |
JPS6281019A (ja) | 縦形気相化学生成装置 | |
JPH0589451U (ja) | 半導体製造装置 | |
JP2519151Y2 (ja) | 化学気相生成装置 | |
JPH04154117A (ja) | 減圧cvd装置 | |
JP2003158081A (ja) | 基板処理装置 | |
JP2792886B2 (ja) | 化学気相成長装置 | |
JP2500759B2 (ja) | 半導体製造装置 | |
JPS6343315A (ja) | 減圧cvd装置 | |
JP2602265B2 (ja) | 縦形炉 | |
JP3420465B2 (ja) | 縦型熱処理装置 | |
JP3072664B2 (ja) | 縦型減圧気相成長装置 | |
JPH03207865A (ja) | 常圧cvd装置 | |
JPH09260300A (ja) | 半導体製造装置 | |
KR20250032961A (ko) | 기판 처리 방법 및 기판 처리 장치 | |
JPH0721570Y2 (ja) | 縦型減圧cvd膜製造装置 | |
KR950012906B1 (ko) | 반도체 제조장치 | |
JPH0533525U (ja) | 枚葉式cvd装置 | |
JPH1027758A (ja) | 気相成長装置及び半導体ウエハの気相成長方法 |